2011-10-05 1 smbta06upn 5 4 6 3 2 1 npn / pnp silicon af transistor array ? high breakdown voltage ? low collector-emitter saturation voltage ? two (galvanic) internal isolated npn/pnp transistor in one package ? pb-free (rohs compliant) package ? qualified according aec q101 tape loading orientation sc74_tape 123 4 5 6 w1s direction of unreeling top view marking on sc74 package (for example w1s) corresponds to pin 1 of device position in tape: pin 1 opposite of feed hole side eha07177 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package smbta06upn s2p 1=e 2=b 3=c 4=e 5=b 6=c sc74 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 80 v collector-base voltage v cbo 80 emitter-base voltage v ebo 4 collector current i c 500 ma peak collector current, t p 10 ms i cm 1 a base current i b 100 ma peak base current i bm 200 total power dissipation- t s 115 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150
2011-10-05 2 smbta06upn thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 105 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 80 - - v collector-base breakdown voltage i c = 100 a, i e = 0 v (br)cbo 80 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 4 - - collector-base cutoff current v cb = 80 v, i e = 0 v cb = 80 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a collector-emitter cutoff current v ce = 60 v, i b = 0 i ceo - - 100 na dc current gain 2) i c = 10 ma, v ce = 1 v i c = 100 ma, v ce = 1 v h fe 100 100 - - - - - collector-emitter saturation voltage 2) i c = 100 ma, i b = 10 ma v cesat - - 0.25 v base-emitter voltage 2) i c = 100 ma, v ce = 1 v v be(on) - - 1.2 ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 20 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 7 - pf 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation) 2 pulse test: t < 300s; d < 2%
2011-10-05 3 smbta06upn dc current gain h fe = ? ( i c ) v ce = 1 v ehp00821 10 h c fe 10 1 10 -1 0 100 c 25 c -50 c 1 10 2 10 3 10 ma 2 10 3 10 0 10 collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0.0 10 ehp00819 cesat v 0 3 10 c ma 1 10 2 10 c 5 5 100 25 c -50 c 0.1 0.2 0.3 0.4 0.5 0.6 v 0.8 base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 ehp00818 10 0 v besat 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 ?c 25 ?c -50 ?c collector current i c = ? ( v be ) v ce = 1v ehp00815 10 0 v be 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 c 25 c -50 c
2011-10-05 4 smbta06upn collector cutoff current i cbo = ? ( t a ) v cbo = 80 v ehp00820 10 0 c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3 transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz 10 ehp00817 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb 0 5 10 15 20 25 30 35 40 45 50 55 pf 65 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 250 300 mw 400 p tot
2011-10-05 5 smbta06upn permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2011-10-05 6 smbta06upn package sc74 package outline foot print standard packing 0.5 0.95 1.9 2.9 54 6 3 2 1 1.1 max. (0.35) (2.25) ?.2 2.9 b 0.2 +0.1 -0.05 0.35 pin 1 marking m b 6x 0.95 1.9 0.15 -0.06 +0.1 1.6 10? max. a ?.1 2.5 0.25 10? max. ?.1 ?.1 a 0.2 m 0.1 max. 2.7 4 3.15 pin 1 marking 8 0.2 1.15 reel ?80 mm = 3.000 pieces/reel reel ?30 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. manufacturer 2005, june date code (year/month) bcw66h type code pin 1 marking laser marking marking layout (example) small variations in positioning of date code, type code and manufacture are possible.
2011-10-05 7 smbta06upn edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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